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PROTOTYPING AND CHARACTERIZATION OF 1200V, SCHOTTKY SIC SHOTTKY DIODE (RE-ISSUE)

ESA Open Invitation To Tender AO7479
Open Date: 05/04/2013
Closing Date: 17/05/2013



Status: ISSUED
Reference Nr.: 13.1QM.02
Prog. Ref.: TRP
Budget Ref.: E/0901-01 - TRP
Special Prov.: B+DK+F+D+I+NL+E+S+CH+GB+IRL+A+N+FIN+POR+GR+LUX+CZ+RO+PL
Tender Type: C
Price Range: 200-500 KEURO
Establishment: ESTEC
Directorate: Directorate of Technical & Quality Manag
Department: Product Assurance and Safety Department
Division: Materials & Components Technology Divisi
Contract Officer: Susana Fernandez San Roman
Last Update Date: 05/04/2013
Update Reason: Tender issue

The study will be focused on the developing of 5A 1200V Silicon Carbide (SiC) Schottky diode in hermetic package with the main goalto characterize the performances of the devices in terms of switching capability, reliability of the technology and main characterization of static and dynamic parameters as a function of temperatures as well as to characterize the thermal impedance and resistanceof the proposed package solution. The device will also be characterized the tolerance of the device to Total Ionizing Dose (TID) and proton fluence in order to evaluate their potential future application in space missions. The goal is having a device whose electrical characteristics are enveloping the performances of the devices already available on the market: - Zero Reverse Recovery Current - Zero Forward Recovery Voltage - Temperature independent switching behaviour - Low figure of merit QC/IF where QC is the totalcapacitive charge (goal is QC<20nC) - Package in TO-257 or LCC style As one of the main feature of SiC compound is the high thermalconductivity (around twice the Si one) the maximum operating junction temperature and consequently the maximum power density is expected higher with respect the Si devices.

The reliability of the developed diodes should as well be assessed in this study establishing a limit for the junction temperature for reliable operation as well as the thermal properties of the package At the present stage, the SiC Schottky devices have been already commercialized for mainly automotive market, but the developing and evaluation of anhermetic 1200V SiC Schottky diodes would be appealing for TWTA and other space voltage space application due to the demonstrated performances of the devices on the market. The study will be organized with the following work structure:
-Phase 1: critical analysisofthe technical requirements, compliance matrix of goal values for the main key parameters
-Phase 2: trade-off analysis of the main design structure and topology with relevant simulation
-Phase 3: manufacturing processes definition and main trade-off analysis, first issue of draft Process Identification Document (PID), first run in foundry
-Phase 4: Electrical characterization and stability verification of first run in foundry and analysis of the results
-Phase 5: Review of the manufacturing processes implementing anycorrective actions come from the previous phase, second issue of PID and second run in foundry
-Phase 6: Definition of the electrical and thermal resistance/impedance characterization, reliability assessment and radiation test program. For the overall test program the sample size should be at least 100 devices.
-Phase 7: critical analysis of test results. Reliability analysis and identification of future activities needed to qualification of the device, analysis of manufacturing cost and forecast of yield. Procurement Policy: C(1) = Activity restricted to non-prime contractors (incl. SMEs). For additional information please go to EMITS news (dated 05/02/2001) "Industrial Policy measures for non-primes, SMEs and R&D entities in ESA programmes".

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