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ESA Open Invitation To Tender AO8747
Open Date: 16/09/2016
Closing Date: 10/04/2017 13:00:00

Status: ISSUED
Reference Nr.: 16.1TT.61
Prog. Ref.: ARTES 5 Sub-El. 5.1
Budget Ref.: E/0505-01B - ARTES 5 Sub-El. 5.1
Tender Type: C
Price Range: KEURO
Products: Ground Segment / Ground Station / RF equipment / Transmitter and Receiver assemblies, Frequency converters
Technology Domains: Ground Station Systems and Networks / Ground Station System / Advanced Ground Station Design Concepts
Establishment: ESTEC
Directorate: Directorate Telecom & Integrated Applica
Department: Telecom Technologies, Product& Systems Department
Division: Technologies and Product Division
Contract Officer: Piesche, Claudia Ria
Industrial Policy Measure: C1 - Activities in open competition limited to the non-Larg
Last Update Date: 16/09/2016
Update Reason: Tender issue

Objective: The objective of this activity is to develop an IQ-modulator front-end based on SiGe, with very high linearity (large ACPR) and operable over a wide frequency range. Targeted Improvements: GaAs broadband modulators consume large chip area (e.g. 15 sq mm) and only have a moderate yield. With the use of SiGe technology, a more compact design covering a wider frequency range should be feasible. There will be a significant cost reduction due to smaller chip area as the price is set by square area. Additionally power consumption will be reduced drastically due to lower breakdown voltage. Description: IQ-modulators are part of RF frontends. The higher the modulation scheme is (e.g. 1024 QAM), the larger is the demand with respect to linearity. Moreover, a large frequency range can cover different scenarios up to Ka-band frequencies. Todays IQ-modulators are mainly based on GaAs. These modulators are rather small band (e.g. 1-6 GHz) and show very high ACPR values (e.g. -74 dBc @ 2 GHz). GaAs modulators are limited in maximum frequency due to transistor device sizes in these technologies. With the usage of SiGe, active device size is much smaller. Therefore, these technologies could be a promising candidate for modulators covering a large frequency range. On the other hand side SiGe processes show low breakdown voltage, which may limit the linearity of mixer devices. Mixer device will be the core component of this activity (low noise floor and high linearity).Work Logic: Phase 1: Analysis of existing designs based on GaAs and SiGe. Evaluation of possible SiGe processes, which can be used in order to manufacture a high linear IQ-modulator covering a large frequency range. Phase 2: Design, layout and manufacturing and test if SiGe IQ-modulator. The intention is of this activity the design of a modulator for 1-25GHz, which shows an ACPR of -74 dBc at low frequencies (comparable to GaAs).Procurement Policy: C(1) = Activity restricted to non-prime contractors (incl. SMEs). For additional information please go to EMITS news "Industrial Policy measures for non-primes, SMEs and RD entities in ESA programmes".

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